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Photoresist development for EUV lithography has stagnated with organic chemically amplified resists comprising low molecular-weight polymers and photoacid generators, largely due to their insensitivity under EUV.
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Incorporating EUV-absorbing inorganics (Sn, Zn, etc.) improves sensitivity to EUV radiation, enabling patterning down to ~8 nm.
- In present designs, however, each resist involves a distinct compound whereas mix-and-match approaches would reveal clearer design rules.